The effect of nitrogen partial pressure on Zr-Si-N diffusion barrier

Microelectronic Engineering

Volumn 71, Issue 1, 2004, Pages 28-33

  Song, Z X ^a   Xu, K W ^a   Chen, H ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Diffusion barrier; Nitrogen partial pressure; Thermal stability; Zr Si N film

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION; MAGNETRON SPUTTERING; NITROGEN; PARTIAL PRESSURE; SILICON NITRIDE; SILICON WAFERS; THERMODYNAMIC STABILITY; ULSI CIRCUITS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

DIFFUSION BARRIERS; STRESS MIGRATION;

TERNARY SYSTEMS;

EID: 0348209108     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.08.006     Document Type: Article

References (16)

1. Lioydj J.R., Clemens J., Snede R. Microelectron. Reliab. 39:1999;1595-1602.
2. Kwak M.Y., Shim D.H., Kang T.W., et al. Thin Solid Films. 339:1999;290-293.
3. Chen G.S., Chen S.T. J. Vac. Sci. Technol. A. 18:2000;720-723.
4. Takeyana M.B., Noya A., Sakanishi K. J. Vac. Sci. Technol. B. 18:2000;1333-1337.
5. No J.T., O J.H., Lee C. Mater. Chem. Phys. 63:2000;44-49.
6. Lee C., Shin Y.H. Mater. Chem. Phys. 57:1998;17-22.
7. Lee Y.J., Suh B.S., Rha S.K., Parke C.O. Thin Solid Films. 320:1998;141-146.
8. Bystrova S., Holleman J., Woerlee P.H. Microelectron. Eng. 55:2001;189-195.
9. Diserens M., Patscheider J., Levy F. Surf. Coat. Technol. 108-109:1998;241-246.
10. Nose M., Chiou W.A., Chou M., Mae T., Meshii M. J. Vac. Sci. Technol. A. 208:2002;823-828.
11. Wang J.H., Chen L.J., Lu Z.C., et al. J. Vac. Sci. Technol. B. 14:2002;1522-1526.
12. T. Nogami, J. Romeo, V. Dubin, D. Brown, E. Adem, in: IITC Proc, June (1998) 298-300.
13. Murarka S.P. Mater. Sci. Eng.: R. 19:1997;87-151.
14. Burnett A.F., Cech J.M. J. Vac. Sci. Technol. A. 11:1993;2970-2974.
15. Ma D.J., Xu K.W., He J.W., Lu J. Surf. Coat. Technol. 116-119:1999;128-132.
16. Latt K.M., et al. J. Mater. Sci. 36:2001;5705-5712.