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Materials Chemistry and Physics

Volumn 71, Issue 1, 2001, Pages 1-6

The effect of oxygen on the interfacial reactions of Cu/TaNx/Si multilayers

(4) Yin, Kai Min a Chang, Li b Chen, Fu Rong a Kai, Ji Jung a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Cu metallization; Diffusion barrier; Oxidation; Transmission electron microscopy

Indexed keywords

ANNEALING; COPPER; CRYSTAL MICROSTRUCTURE; DEPOSITION; GRAIN BOUNDARIES; INTERFACES (MATERIALS); IONIZATION; OXIDATION; PLASMA APPLICATIONS; SILICON NITRIDE; SILICON WAFERS; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

TANTALUM NITRIDE;

MULTILAYERS;

EID: 0035427083 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(00)00501-0 Document Type: Article

Times cited : (14)

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