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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 77, Issue 3, 2000, Pages 282-287

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

(6) Lee, Y K a Latt, Khin Maung a JaeHyung, Kim a Osipowicz, Thomas b Sher Yi, Chiam b Lee, Kangsoo c

a SCHOOL OF APPLIED SCIENCE (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

c INSTITUTE OF MICROELECTRONICS (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TANTALUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIERS; IONIZED METAL PLASMA;

DIELECTRIC MATERIALS;

EID: 0034270107 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00504-3 Document Type: Article

Times cited : (9)

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