Effective mobility and interface-state density of la2O 3 nMISFETs after post deposition annealing

IEICE Electronics Express

Volumn 3, Issue 13, 2006, Pages 316-321

  Ng, Jin Aun ^a   Sugii, Nobuyuki ^a   Kakushima, Kuniyuki ^a   Ahmet, Parhat ^a   Tsutsui, Kazuo ^a   Hattori, Takeo ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Interface state density; La2O3; Mobility; nMISFET; PDA

Indexed keywords

EID: 33947430560     PISSN: None     EISSN: 13492543     Source Type: Journal    
DOI: 10.1587/elex.3.316     Document Type: Article

References (13)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ gale dielectrics: current status and materials properties considerations," J. Appl. Phys., vol. 89, pp. 5243-5275, May 2001.
2. The International Technology Roadmap for Semiconductors 2005, Web Site. http://www.itrs.net/Common/2005ITRS/FEP2005.pdf
3. H. Nohira, T. Yoshida, H. Okamoto, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, J.-A. Ng, Y. Kobayashi, S.-I. Ohmi, H. Iwai, E. Ikenaga, K. Kobayashi, Y. Takata, and T. Hattori, "Thermal stability of lanthanum oxide/Si(100) interfacial transition layer," EC'S Trans., vol. 1, no. 1, pp. 87-96, Oct. 2005.
4. 3 thin films grown by E-beam evaporation," Microelectron. J., vol. 36, pp. 41-49, Jan. 2005.
5. 3 thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing," Jpn. J. Appl. Phys., vol. 44, no. 6, pp. 4032-4042, June 2005.
6. 3 gate thin films," Jpn. J. Appl. Phys., vol. 44, no. 2, pp. 1045-1051, Feb. 2005.
7. 3 gate dielectrics with equivalent oxide thickness 5-10 A," Symp. VLSI Technol. Tech. Dig., pp. 16-17, June 2000.
8. 3 gate dielectric; comparison of post deposition annealing and post metallization annealing," Microelectron, Eng., vol. 80, pp. 206-209, June 2005.
9. 3 nMISFET," ECS Trans., vol. 2, no. 1, pp. 329-338, May 2006.
10. C. G. Sodini, T. W. Ekstedt, and J. L. Moll, "Charge accumulation and mobility in thin dielectric MOS transistors," Solid-State Electron., vol. 25, no. 9, pp. 833-841, Sept. 1982.
11. |11 C. R. Viswanathan arid V. Ramgopal Rao, "Application of charge pumping technique for sub-micron MOSFET characterization," Microelectron. Eng., vol. 40, pp. 131-146, Nov. 1998.
12. A. Toriumi, K. Iwarnoto, H. Ola, M. Kadoshima, W. Mizubayashi, T. Nabatame, A. Ogawa, K. Tominaga, T. Horikawa, and H. Satake, "Advantages of HfAlON gate dielectric film for advanced low power CMOS application," Microelectron. Eng., vol. 80, pp. 190-197, June 2005.
13. S. Takagi, M. Iwase, and A. Toriumi, "On the universality of inversion-layer mobility in N- and P-channel MOSFET's," IEDM Tech, Dig., pp. 398-401, Dec. 1988.