Effect of post-metallization annealing on electrical characteristics of La2O3 gate thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 2, 2005, Pages 1045-1051

  Kuriyama, Atsushi ^a   Ohmi, Shun Ichiro ^a   Tsutsui, Kazuo ^a   Iwai, Hiroshi ^a  

^a Tokyo Institute of Technology ^*  (Japan)

Author keywords

Fixed charge; Flat band shift; High k; La2O3; Lanthanum oxide; Oxygen deficiency; Rare earth oxide

Indexed keywords

ANNEALING; CAPACITORS; DEPOSITION; ELECTRIC POTENTIAL; ELECTRODES; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; METALLIZING; MIS DEVICES; OXYGEN;

FIXED CHARGE; FLAT-BAND SHIFT; HIGH-K; LA2O3; LANTHANUM OXIDE; OXYGEN DEFICIENCY; RARE EARTH OXIDES;

THIN FILMS;

EID: 17444390888     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1045     Document Type: Article

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