Optical characteristics of GaN single crystals grown by the HVPE: Effects of thermal annealing and N2 plasma treatment

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 206-211

  Ryu, Jeong Ho ^a   Oh, Dong Keun ^a   Yoon, Seon Tae ^a   Choi, Bong Geun ^a   Yoon, Jong Won ^a   Shim, Kwang Bo ^a  

^a Hanyang University   (South Korea)

Author keywords

A1. N2 plasma treatment; A3. Hydride vapor phase epitaxy; Al. Photoluminescence; Al. Thermal annealing; B2. GaN

Indexed keywords

ANNEALING; GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; VAPOR PHASE EPITAXY;

GAN; HYDRIDE VAPOR PHASE EPITAXY; N2 PLASMA TREATMENT; THERMAL ANNEALING;

SINGLE CRYSTALS;

EID: 33745835770     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.017     Document Type: Article

References (17)

1. Khan M.A., Bhattarai A., Kuznia J.N., and Olson D.T. Appl. Phys. Lett. 63 (1993) 1214
2. Yasan A., McClintock R., Mayes K., Darvish S.R., Kung P., Razeghi M., and Molnar R.J. Opto-Electron. Rev. 10 4 (2002) 287
3. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsuhita T., Kiyoku H., and Sugimoto Y. Jpn. J. Appl. Phys. 35 (1996) L217
4. Xu G.Y., Salvador A., Kim W., Fan Z., Lu C., Tang H., Morkos H., Smith G., Estes M., Goldberg B., Yank W., and Krishnankutty S. Appl. Phys. Lett. 71 (1997) 2154
5. Cao X.A., Cho H., Perton S.J., Dang G.T., Zhang A.P., Ren F., Shul R.J., Zhang L., Hichman R., and Van Hove J.M. Appl. Phys. Lett. 75 (1999) 232
6. Molnar B., Eddy Jr. C.R., and Doverspike K. J. Appl. Phys. 78 (1995) 6132
7. Hong H.F., Chao C.K., Chyi J.I., and Tzeng Y.C. Mater. Chem. Phys. 77 (2002) 411
8. Lee J.-M., Chang K.-M., Kim S.-W., Huh C., Lee I.-H., and Park S.-J. J. Appl. Phys. 87 (2000) 7667
9. Kent D.G., Lee K.P., Zhang A.P., Luo B., Overberg M.E., Abernathy C.R., Ren F., Machenzie K.D., Perton S.J., and Nakagawa Y. Solid-State Electron. 45 (2001) 1837
10. Kang T.W., Yuldashev S.U., Kim D.Y., and Kim T.W. Jpn. J. Appl. Phys. 39 (2000) L25
11. Monemar B., Larsson H., Hemmingsson C., Ivanov I.G., and Gogova D. J. Crystal Growth 281 (2005) 17
12. Haberer E.D., Chen C.-H., Keller S., DenBaars S., Mishra U., and Hu E. J. Vac. Sci. Technol. B 19 (2001) 603
13. Cole M.W., Ren R., and Pearton S.J. Appl. Phys. Lett. 71 (1997) 3004
14. Sun C.J., Kung P., Saxler A., Ohsato H., Bigan E., Razeghi M., and Gaskill D.K. J. Appl. Phys. 76 (1994) 236
15. Freitas Jr. J.A. J. Crystal Growth 281 (2005) 168
16. Hovel H.J. Semicond. Sci. Technol. 7 (1992) A1
17. Ambacher O., Freudenberg F., Dimitrov R., Angerer H., and Stutzmann M. Jpn. J. Appl. Phys. 1 37 (1998) 2416