Optimization of the active region of InGaNGaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1576-1581

  Grandusky, J R ^a   Jamil, M ^a   Shahedipour Sandvik, F ^a   DeLuca, J A ^b   LeBoeuf, S F ^b   Cao, X A ^b   Arthur, S D ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN OF EXPERIMENTS (DOE); FULL WIDTH AT HALF MAXIMUM (FWHM);

COMPUTER SIMULATION; INDIUM COMPOUNDS; OPTIMIZATION; PHOTOLUMINESCENCE; STATISTICAL METHODS; TRANSFER FUNCTIONS;

LIGHT EMITTING DIODES;

EID: 31144462494     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1947804     Document Type: Article

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