Photoluminescence and excitation spectra of deep defects in GaN

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 156-161

  Reshchikov, Michael A ^a   Molnar, Richard J ^b   Morkoç, Hadis ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC EXCITATION; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON; WAVELENGTH;

DEEP DEFECTS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); RED LUMINESCENCE (RL);

GALLIUM NITRIDE;

EID: 34249915045     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e5.6     Document Type: Conference Paper

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