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Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 691-696

Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer

(4) Grandusky, James R a Jindal, Vibhu a Jamil, Muhammad a Shahedipour Sandvik, Fatemeh a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; HOMOEPITAXIAL GROWTH; POLISHING DAMAGE; TEMPLATE ANNEALING;

ANNEALING; DECOMPOSITION; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MORPHOLOGY; OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS;

SEMICONDUCTING FILMS;

EID: 33646391684 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

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