Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

Thin Solid Films

Volumn 326, Issue 1-2, 1998, Pages 233-237

  Yoon, S F ^a   Zheng, H Q ^a   Zhang, P H ^a   Mah, K W ^a   Ng, G I ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Indium phosphide; Molecular beam epitaxy; Phosphorus; Semiconductors

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOSPHORUS; PHOTOLUMINESCENCE;

PHOSPHORUS CRACKER CELL;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032482826     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00563-X     Document Type: Article

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