Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 471-476

  Kohli, P ^a,b   Jain, Amitabh ^b   Bu, H ^b   Chakravarthi, S ^b   Machala, C ^b   Dunham, S T ^c   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTAL ORIENTATION; DEPOSITION; DIFFUSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; SILICA; SILICON NITRIDE; VLSI CIRCUITS;

ROOM TEPERATURE CHEMICAL VAPOR DEPOSITION (RTCVD); TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTOR JUNCTIONS;

EID: 1642271750     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1642645     Document Type: Conference Paper

References (7)

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5. S. Tokitoh et al., IRPS Technical Digest (1997).
6. S. Inaba et al., IEEE Trans. Electron Devices 46, 6 (1999).
7. R. Fair et al., Proc.-Electrochem. Soc. 96, 4 (1996).