Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films

Semiconductors

Volumn 36, Issue 3, 2002, Pages 265-269

  Georgobiani, A N ^a   Gruzintsev, A N ^b   Volkov, V T ^b   Vorob'ev M O ^a  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036522398     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1461400     Document Type: Article

References (11)

1. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 38, L166 (1999).
2. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys. 38, L1205 (1999).
3. K. Minegishi, Y. Kowai, Y. Kikuchi, et al., Jpn. J. Appl. Phys. 36, L1453 (1997).
4. Y.R. Ryu, W.J. Kim, and H.W. White, J. Cryst. Growth 219, 419 (2000).
5. X. Guo, J. Choi, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys. 40, L177 (2001).
6. S.B. Zhang, S.H. Wei, and A. Zunger, Phys. Rev. B 63, 075205 (2001).
7. T.V. Buthuzi, T.G. Chelidze, and A.N. Georgobiani, Phys. Rev. B 58, 10692 (1998).
8. A.N. Georgobiani and M.B. Kotlyarevskii, Nucl. Phys. B 61, 341 (1998).
9. A.N. Georgobiani, M.B. Kotlyarevskii, V.V. Kidalov, and I.V. Rogozin, Inorg. Mater. 33, 185 (1997).
10. W. van Gool and A.P. Cleiren, Philips Res. Rep., No. 15, 238 (1960).
11. W. van Gool, Philips Res. Rep., No. 3, 61 (1963).