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Volumn 46, Issue 5 B, 2007, Pages 3202-3205
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Bonding structure of silicon oxynitride grown by plasma-enhanced chemical vapor deposition
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Author keywords
Bonding structure; PECVD; Random bonding; Silicon oxynitride; X ray photoelectron spectroscopy
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Indexed keywords
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REFRACTIVE INDEX;
SILICON NITRIDE;
STOICHIOMETRY;
X RAY PHOTOELECTRON SPECTROSCOPY;
BONDING STRUCTURE;
RANDOM BONDING;
SILICON OXYNITRIDE;
FILM GROWTH;
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EID: 34547925696
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.46.3202 Document Type: Article |
Times cited : (11)
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References (19)
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