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Volumn 46, Issue 5 B, 2007, Pages 3202-3205

Bonding structure of silicon oxynitride grown by plasma-enhanced chemical vapor deposition

Author keywords

Bonding structure; PECVD; Random bonding; Silicon oxynitride; X ray photoelectron spectroscopy

Indexed keywords

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON NITRIDE; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 34547925696     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3202     Document Type: Article
Times cited : (11)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.