Recent developments in silicon optoelectronic devices

Microelectronics Reliability

Volumn 42, Issue 3, 2002, Pages 317-326

  Wong, Hei ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTRAINT THEORY; INTERNET; MULTIMEDIA SYSTEMS; POROUS SILICON;

SILICON-BASED INTEGRATED OPTOELECTRONIC CIRCUITS (SI-OEIC);

INTEGRATED OPTOELECTRONICS;

EID: 0036496803     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00008-2     Document Type: Article

References (45)

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3. Silica-based planar lightwave circuits
4. Low-loss fiber-matched low-temperature PECVD waveguides with small-core dimension for optical communication systems
5. 1C compatible optical coupling techniques for integration of arrow with photodetector
6. A 100-ch optical WDM transmission/distribution at 622 Mbits/s over 50 km
7. 2 waveguides on Si
8. PHASAR-based WDM-devices: Principles, design and applications
9. Broadly tunable resonant-cavity light-emitting diode
10. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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12. Defects in silicon oxynitride gate dielectric
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14. The origin of photoluminiscence from films of silicon-rich silica
15. 2 layers
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17. Theory of optical properties of quantum wires in porous silicon
18. 2/Si superlattices
19. Optical properties of confined Si structures
20. 2 by oxidation
21. Visible photoluminiscence from nanocrystal formed in silicon dioxide by ion implantation and thermal processing
22. Silicon oxynitride planar waveguiding structures for application in optical communication
23. Evaluation of polymer based third order nonlinear integrated optics devices device
24. 2 grown on Si wafer
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26. 2
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28. 2 films by sequential Si and C ion implantation
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31. Study of luminescent porous polycrystalline silicon thin films
32. Fourier transform IR monitoring of porous silicon passivation during post-treatments such as anodic oxidation and contact with organic solvents
33. Natural oxidation of annealed chemically etched porous silicon
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35. Electronic structure of light-emitting porous silicon
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41. 2
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