The relationship between the macroscopic properties of PECVD silicon nitride and oxynitride layers and the characteristics of their networks

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 2, 2002, Pages 181-186

  Klanjsek Gunde M ^a   Macek M ^b  

^a NATIONAL INSTITUTE OF CHEMISTRY   (Slovenia)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; RESIDUAL STRESSES; SILICON WAFERS; STRUCTURE (COMPOSITION); TEMPERATURE;

ETCH RATE; OXYNITRIDE LAYERS;

SILICON NITRIDE;

EID: 0036477494     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100932     Document Type: Article

References (23)