Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride

Microelectronics Reliability

Volumn 46, Issue 12, 2006, Pages 2056-2061

  Wong, C K ^a   Wong, H ^a   Chan, M ^b   Kok, C W ^b   Chan, H P ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; HYDROGEN BONDS; OPTICAL PROPERTIES; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

INTEGRATED WAVEGUIDE APPLICATIONS; RE-OXIDATION; SILICON OXYNITRIDE; THERMAL OXIDATION;

SILICON NITRIDE;

EID: 33748934379     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.01.006     Document Type: Article

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