Variable body effect factor fully depleted silicon-on-insulator metal oxide semiconductor field effect transistor for ultra low-power variable-threshold-voltage complementary metal oxide semiconductor applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3311-3314

  Ohtou, Tetsu ^a   Nagumo, Toshiharu ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Body effect; Body effect factor; Silicon on insulator (SOI); Variable threshold voltage CMOS (VTCMOS)

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC FIELDS; LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; VLSI CIRCUITS;

BODY EFFECT; BODY EFFECT FACTOR; SILICON-ON-INSULATOR (SOI); VARIABLE-THRESHOLD-VOLTAGE CMOS (VTCMOS);

MOSFET DEVICES;

EID: 4344690692     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3311     Document Type: Article

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