A simultaneous vertical and horizontal self-patterning method for deep three-dimensional microstructures

Journal of Micromechanics and Microengineering

Volumn 17, Issue 7, 2007, Pages

  Hirose, Kenichiro ^a   Shiraishi, Fumitaka ^a   Mita, Yoshio ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INDUCTORS; LITHOGRAPHY; MEMS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICES; SPUTTERING;

ALUMINUM EVAPORATION; DEEP TRENCHES; SELF PATTERNING METHOD; THREE DIMENSIONAL MICROSTRUCTURES;

MICROMECHANICS;

EID: 34547591936     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/17/7/S02     Document Type: Article

References (15)

1. Lärmer F and Schilp A (R Bosch GmbH) 1996 Method for anisotropic plasma etching of substrate US Patent 5501893 and EP Patent 625285
2. Marty F, Rousseau L, Saadany B, Mercier B, Français O, Mita Y and Bourouina T 2005 Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures Microelectron. J. 36 673-7
3. Liu C 1998 Through wafer electrical interconnects by sidewall photolithographic patterning IMTC98 vol 2 pp 1402-5
4. Singh V K, Sasaki M, Watanabe Y, Kawakita M, Hayashi H and Hane K 2004 Improved spray coating of phtoresist for three-dimensional photolithography over deep structure Microprocesses and Nanotechnology Conf. 2004 pp 306-7
5. Shaw K A, Zhang Z L and MacDonald N C 1994 SCREAM: I. A single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures Sensors Actuators A 40 63-70
6. Hirose K, Mita Y and Shibata T 2005 Self-patterning metal deposition on deep three-dimensional micro structures for vertically buried inductors MicroMechanics Europe (MME 2006) pp 85-8
7. Sarajilić E, de Boer M J, Jansen H V, Arnal N, Puech M, Kfijnen G and Elwenspoek M 2004 Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers J. Micromech. Microeng. 14 S70-5
8. Harada T, Ito K, Shibata T and Mita Y 2006 A bulk knife- edge as-deposition self-patterning structure for Greek-cross and organic thin film transistors IEEE Int. Conf. on Microelectronic Test Structures (ICMTS 2006) pp 149-54
9. Mita Y, Mita M, Tixier A, Gouy J P and Fujita H 2000 Embedded-mask- methods for mm-scale multi-layer vertical/slanted Si structures IEEE Int. Conf. MicroElectroMechanical Systems (MEMS 2000) pp 300-5
10. Hirose K, Mita Y, Kubota M and Shibata T 2006 Deep-trench vertical Si photodiode towards active-device integrated OMEMS IEEE/LEOS Int. Conf. Optical MEMS (OMEMS 2006) pp 191-2
11. Mita Y, Sugiyama M, Kubota M, Marty F, Bourouina T and Shibata T 2006 Aspect ratio dependent scalloping attenuation in DRIE and an application to low-loss fiber-optical switches IEEE Int. Conf. MicroElectroMechanical Systems (MEMS 2006) pp 114-7
12. Hayashi Z, Katayama Y, Edo M and Nishio H 2003 High-efficiency DC-DC converter chip size module with integrated soft ferrite IEEE Trans. Magn. 39 3068-72
13. Quévy E P, Howe R T and King T-J 2006 Reconstituted wafer technology for heterogeneous integration IEEE Int. Conf. MicroElectroMechanical Systems (MEMS 2006) pp 302-5
14. Piernas B, Nishikawa K, Kamogawa K, Nakagawa T and Araki K 2002 High-Q factor three-dimensional inductors IEEE Trans. Microw. Theory Tech. 50 1942-9
15. de Boer M J, Gardeniers J G E, Jansen H V, Smulders E, Gilde M J, Roelofs G, Sasserath J N and Elwenspoek M 2002 Guidelines for etching silicon MEMS structures using fluorine high density plasmas at cryogenic temperatures J. Microelectromech. Syst. 11 385-401