Fabrication of porous membranes for MEMS packaging by one-step anodization in sulfuric acid

Journal of the Electrochemical Society

Volumn 154, Issue 9, 2007, Pages

  Hellin Rico, R ^a,c   Du Bois, B ^c   Witvrouw, A ^c   Van Hoof, C ^b,c   Celis, J P ^a,d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c IMEC   (Belgium)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; POROUS MATERIALS; SULFURIC ACID; THIN FILMS;

ANODIC ALUMINUM OXIDE; ANODIZATION; NONLITHOGRAPHIC FABRICATION; POROUS MEMBRANES;

MEMS;

EID: 34547542466     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2752117     Document Type: Article

References (43)

1. H. Stahl, A. Hoechst, F. Fischer, L. Metzger, R. Reichenbach, F. Laermer, S. Kronmueller, K. Breitschwerdt, R. Gunn, S. Watcham, in Transducers, Proceedings of the International Conference on Solid State Sensors, Actuators and Microsystems, 2, IEEE, Boston, p. 1899 (2003).
2. A. Witvrouw, H. A. C. Tilmans, and I. De Wolf, Microelectron. Eng., 76, 245 (2004).
3. H. Liu, J. M. Lu, and W. Fang, J. Micromech. Microeng., 15, 1433 (2005).
4. T. Tsuchiya, Y. Kageyama, H. Funabashi, and J. Sakata, Sens. Actuators, A, 90, 49 (2001).
5. H. A. C Tilmans, M. D. J. Van de Peer, and E. Beyne, J. Microelectromech. Syst., 9, 206 (2000).
6. Y.-T. Cheng, W.-T. Hsu, K. Najafi, C.-T. Nguyen, and L. Lin, J. Microelectromech. Syst., 11, 556 (2002).
7. W. H. Ko, J. T. Suminto, and G. J. Yeh, Micromachining and Micropackaging of Transducers, p. 41, Elsevier Science, BV, Amsterdam (1985).
8. C. Rusu, H. Jansen, R. Gunn, and A. Witvrouw, DTIP of MEMS and MOEMS 2003 Proceedings, IEEE, Cannes, France, pp. 245-250 (2003).
9. L. C. Chomas and D. F. Guillou, IMAPS 2003 Proceedings, American Ceramic Society, Boston, pp. 389-401 (2003).
10. A. Hochst, R. Scheuerer, H. Stahl, F. Fischer, L. Metzger, R. Reichenbach, F. Larmer, S. Kronmuller, S. Watcham, C. Rusu, Sens. Actuators, A, 114, 355 (2003).
11. B. H. Stark and K. Najafi, J. Microelectromech. Syst., 13, 147 (2004).
12. R. Hellin Rico, J.-P. Celis, C. Van Hoof, K. Baert, and A. Witvrouw, DTIP of MEMS and MOEMS 2006 Proceedings, IEEE, Stressa, Italy, pp. 121-126 (2006).
13. R. He and C.-J. Kim, MEMS 2005 Proceeding, 544-547, IEEE, Miami (2005).
14. A. Viviani, D. Flandre, and P. Jespers, Electron. Lett., 35, 749 (1999).
15. R. He and C.-J. Kim, MEMS 2006 Proceedings, 126-129, IEEE, Istanbul (2006).
16. O. Jessenky, F. Muller, and U. Gosele, Appl. Phys. Lett., 72, 1173 (1998).
17. J. J. Schneider, J. Eugstler, K. P. Budna, C. Teichert, and F. Franzka, Eur. J. Inorg. Chem., 2005, 2352 (2005).
18. Board on Physics and Astronomy (BPA), Plasma Science. From Fundamental Research to Technological Applications. National Research Council. The National Academies Press, Washington, D.C. (1995).
19. S. Smith, M. McCallum, A. J. Walton, J. T. Stevenson, P. D. Harris, A. W. Ross, and L. Jiang, IEEE Trans. Semicond. Manuf., 18, 238 (2005).
20. L. Young, Anodic Oxide Films, p. 312, Academic, London (1980).
21. S. P. McGinnis and B. Das, Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Proceedings, pp. 179-188, IEEE/Cornell, Ithaca, NY (1995).
22. J. Li, C. Papadopoulos, J. M. Xu, and M. Moskovits, Appl. Phys. Lett., 75, 367 (1999).
23. R. Kanakala, P. V. Singaraju, R. Venkatz, and B. Das, J. Electrochem. Soc., 152, J1 (2005).
24. T. Songsheng, M. Reed, H. Hongtao, and R. Boudreau, MEMS'95 Proceedings, pp. 267-272, IEEE, Amsterdam (1995).
25. J. W. Diggle, T. C. Downie, and C. W. Goulding, Chem. Rev. (Washington, D.C.), 69, 365 (1969).
26. S. Ono and K. Takeda, 49th Annual Meeting, International Society of Electrochemistry, Extended Abstracts, p. 570, Kitakyushu, Japan (1998).
27. J. F. Murphy and C. E. Michelson, Anodizing Aluminum Proceedings, p. 83, Aluminum Development Association, Nottingham, England (1961).
28. D. Crouse, Y. H. Lo, A. Miller, and M. Crouse, Appl. Phys. Lett., 76, 49 (2000).
29. S. K. Thamida and H. C. Chang, Chaos, 12, 240 (2002).
30. L. Menon, K. Bhargava Ram, S. Patibandla, D. Aurongzeb, M. Holtz, J. Yun, V. Kuryatkov, and K. Zhu, J. Electrochem. Soc., 151, C492 (2004).
31. A. P. Li, F. Muller, A. Birner, K. Nielsch, and U. Gösele, J. Appl. Phys., 84, 6023 (1998).
32. Y. Kanamori, K. Hane, H. Sai, and H. Yugami, Appl. Phys. Lett., 78, 142 (2001).
33. J. Liang, H. Chik, A. Yin, and J. Xu, J. Appl. Phys., 91, 2544 (2002).
34. J.-W. Kim, Y.-C. Kim, and W.-J. Lee, J. Appl. Phys., 78, 2045 (1995).
35. F. Keller, M. S. Hunter, and D. L. Robinson, J. Electrochem. Soc., 100, 411 (1953).
36. G. D. Sulka, S. Stroobants, V. Moshchalkov, G. Borghs, and J. P. Celis, J. Electrochem. Soc., 149, D97 (2002).
37. M. J. Bamber, K. E. Cooke, A. B. Mann, and B. Derby, Thin Solid Films, 398-399, 299 (2001).
38. T. Bakke, J. Schmidt, M. Friedrichs, and B. Volker, 16th Micromechanics Europe Workshop Proceedings MME 2005, Göteborg, Sweden, p. 103 (2005).
39. R. Hsiao, D. Miller, H. Santini, and N. Robertson, in Plasma Processing XI, G. S. Mathad, and, M. Meyyappan, Editors, PV 96-12, p. 480, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
40. A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE, 4174, 131 (2000).
41. D. L. Flamm, Pure Appl. Chem., 62, 1709 (1990).
42. T. Syau, B. Baliga, and R. Hamaker, J. Electrochem. Soc., 138, 3076 (1991).
43. K. R. Williams, K. Gupta, and M. Wasilik, J. MEMS, 12, 761 (2003).