메뉴 건너뛰기




Volumn 114, Issue 2-3, 2004, Pages 355-361

Stable thin film encapsulation of acceleration sensors using polycrystalline silicon as sacrificial and encapsulation layer

Author keywords

Accelerometer; Encapsulation; Packaging; Sacrificial etching; Surface micromachining

Indexed keywords

ACCELERATION MEASUREMENT; CMOS INTEGRATED CIRCUITS; ENCAPSULATION; ETCHING; MICROELECTROMECHANICAL DEVICES; OXIDES; PACKAGING; POLYSILICON; SENSORS; SILICON WAFERS; THICKNESS CONTROL;

EID: 4344692139     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.12.020     Document Type: Article
Times cited : (26)

References (12)
  • 2
    • 0035341519 scopus 로고    scopus 로고
    • Polysilicon vibrating gyroscope vacuum-encapsulated in an on-chip micro chamber
    • Tsuchiya T., Kageyama Y., Funabashi H., Sakata J. Polysilicon vibrating gyroscope vacuum-encapsulated in an on-chip micro chamber. Sens. Actuat. A. 90:2001;49-55.
    • (2001) Sens. Actuat. A , vol.90 , pp. 49-55
    • Tsuchiya, T.1    Kageyama, Y.2    Funabashi, H.3    Sakata, J.4
  • 4
    • 0032164259 scopus 로고    scopus 로고
    • Microelectromechanical filters for signal processing
    • Lin L., Howe R.T., Pisano A.P. Microelectromechanical filters for signal processing. J. Microelectromech. Sys. 7:1998;286-294.
    • (1998) J. Microelectromech. Sys. , vol.7 , pp. 286-294
    • Lin, L.1    Howe, R.T.2    Pisano, A.P.3
  • 5
    • 0028529149 scopus 로고
    • Electrostatically driven vacuum-encapsulated polysilicon resonatros. Part I. Design and fabrication
    • Legtenberg R., Tilmans H.A.C. Electrostatically driven vacuum-encapsulated polysilicon resonatros. Part I. Design and fabrication. Sens. Actuat. A. 45:1994;57-66.
    • (1994) Sens. Actuat. A , vol.45 , pp. 57-66
    • Legtenberg, R.1    Tilmans, H.A.C.2
  • 10
    • 0021517388 scopus 로고
    • Plasmaless dry etching of silicon with fluorine-containing compounds
    • Ibbotson D.E., Mucha J.A., Flamm D.L., Cook J.M. Plasmaless dry etching of silicon with fluorine-containing compounds. J. Appl. Phys. 56:1984;2939-2942.
    • (1984) J. Appl. Phys. , vol.56 , pp. 2939-2942
    • Ibbotson, D.E.1    Mucha, J.A.2    Flamm, D.L.3    Cook, J.M.4
  • 11
    • 0010179985 scopus 로고    scopus 로고
    • Plasmaless dry etching of silicon related materials using reactive halogen gas
    • Saito Y. Plasmaless dry etching of silicon related materials using reactive halogen gas. Recent Res. Dev. Electrochem. 1:1998;191-209.
    • (1998) Recent Res. Dev. Electrochem. , vol.1 , pp. 191-209
    • Saito, Y.1
  • 12
    • 4344606457 scopus 로고    scopus 로고
    • 2 for silicon acceleration sensors with high aspect ratio
    • Prague
    • 2 for Silicon Acceleration Sensors with High Aspect Ratio, Eurosensors XIV, Prague, 2001.
    • (2001) Eurosensors , vol.14
    • Metzger, L.1    Fischer, F.2    Mokwa, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.