Improved schottky contacts on n-type 4H-SiC using ZrB 2 deposited at high temperatures

Journal of Electronic Materials

Volumn 36, Issue 7, 2007, Pages 805-811

  Oder, T N ^a   Martin, P ^a,d   Adedeji, A V ^b   Isaacs Smith, T ^c   Williams, J R ^c  

^a YOUNGSTOWN STATE UNIVERSITY   (United States)

^b GEORGIA SOUTHERN UNIVERSITY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d United States of America   (United States)

Author keywords

N type 4H SiC; Schottky barrier height (SBH); Schottky contacts; Thermal stability

Indexed keywords

N-TYPE 4H-SIC; SCHOTTKY BARRIER HEIGHT (SBH); SCHOTTKY CONTACTS;

INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; THERMODYNAMIC STABILITY; VOLTAGE MEASUREMENT;

SCHOTTKY BARRIER DIODES;

EID: 34547464098     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0170-0     Document Type: Article

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