Transition metal carbides, nitrides, and borides for electronic applications

JOM

Volumn 49, Issue 3, 1997, Pages 38-42

  Williams, Wendell S ^a,b,c,d,e  

^a Department of Obstetrics Gynecology   (United States)

^b UNION CARBIDE CORPORATION   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d Case Western Reserve University   (United States)

^e TMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORIDES; CARBIDES; CONDUCTIVE MATERIALS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRONIC EQUIPMENT; INTEGRATED CIRCUITS; NITRIDES; PHASE DIAGRAMS; TRANSITION METAL COMPOUNDS;

CONDUCTING CERAMICS; NIOBIUM CARBIDE;

CERAMIC MATERIALS;

EID: 0031097520     PISSN: 10474838     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02914655     Document Type: Review

References (54)

1. P. Schwartzkopf and R. Kieffer, Refractory Hard Metals (New York: Macmillian Publishing Co., 1953).
2. G.V. Samsonov, Refractory Transition Metal Compounds (New York: Academic Press, 1964).
3. E.K Storms, The Refractory Carbides (New York: Academic Press, 1967).
4. W.S. Williams, Progress in Solid State Chemistry 6, ed. H. Reiss and J.O. McCaldin (New York: Pergamon Press, 1971), pp. 57-118.
5. L.E. Toth, Transition-Metal Carbides and Nitrides (New York: Academic Press, 1971).
6. K. Schwarz, CRC Critical Reviews in Solid State and Materials Sciences, 13 (1987), pp. 211-257.
7. R. Freer, ed., The Physics and Chemistry of Carbides, Nitrides, and Borides NATO ASI Series E, vol. 185 (Dordrect: Kluwer Academic Publishers, 1990).
8. A.I. Gusev, Phys. Stat. Sol. B, 163, (1991), pp. 17-54.
9. V.A. Gubanov, A.L. Ivanovsky, and V.P. Zhokov, Electronic Structure of Refractory Carbides and Nitrides (Cambridge University Press, 1994).
10. F.W. Clinard, Jr., and C.P. Kempter, J. Less-Common Metals 15, 59 (1968).
11. L. Hollander, Jr., J. Appl. Phys. 32, 996 (1961).
12. J. Piper, Nuclear Metallurgy Symp., 10 (New York: Met. Soc. of AIME, 1962).
13. W.S. Williams, Phys. Rev. 135, (A505) (1962).
14. J.-F. Lei, H. Okimna, and J.O. Brittain, Mat. Sci. And Eng., A123, (1990), pp. 129-140.
15. J.R. Cooper and RL. Hansler, J. Chem. Phys., 39 (1963), p. 248.
16. G. Santoro and R.T. Dolloff, J. Appl. Phys., 39, (1968), p. 2293.
17. W.S. Williams, Materials Research Society Symposium Proceedings, 411 - Electrically Based Microstructural Characterization, ed. R.A. Gerhardt, S.R. Taylor, and E.J. Garboczi ((Pittsburgh, PA: MRS, 1996), pp. 169-176.
18. J. Venables, P. Kahn, and R. Lye, Phil. Mag., 18 (1968), p. 177.
19. C. de Novion, P. Lorenzelli and P. Costa, Compt. Rend., 263 (1966) p. 775.
20. L.W. Shacklette and W.S. Williams, J. Appl. Phys, 42 (1971), pp. 4698-4703.
21. L.W. Shacklette and W.S. Williams, Phys. Rev., B7 (1973), pp. 5041-5053.
22. L.C. Dy and W.S. Williams, J. Appl. Phys., 53 (1982), pp. 8915-8927.
23. G.H. Emmons and W.S. Williams, J. Mat. Sci., 18 (1983), pp. 2589-2602.
24. V.S. Nesphor et al., Inorganic Materials, 2 (1966), p. 865.
25. F.A. Modine et al., Phys. Rev., B40 (1989), pp. 9558-9564.
26. B. Chakraborty and P.B. Allen, Phys. Rev. Lett, 42 (1979), pp. 736-738.
27. L.W. Shacklette, L.G. Radosevich, and W.S. Williams, Phys. Rev., B4 (1971), p. 84.
28. M. Tsuchida et al., Jpn. J. Appl. Phys., 32 (1993), pp. 1227-1228.
29. J.E. Sundgren, Thin Solid Films, 128 (1985), pp. 21-44.
30. C. Goldberg et al., Conf: Proc. of ULSI Symposium 1995, (Pittsburgh, PA: MRS, 1996), pp. 247-257.
31. N. Yokoyama, K. Hinode, and Y. Homma, J. Electrochem. Soc., 138 (1991), pp. 190-195.
32. O.A. Gohkova et al., Soviet Physics - Solid State, 7 (1966), p. 2317.
33. D. Kohlstedt and W.S. Williams, Phys. Rev, B3 (1971), p. 293.
34. L.W. Shacklette and H.A. Ashworth, Phys. Rev, B12 (1975) pp. 1146-1153.
35. G.L. Pearson and J. Bardeen, Phys. Rev., 75 (1949), p. 865
36. V. Ern and A.C. Swittendick, Phys. Rev., 137 (1965), p. 1927.
37. A. Necket et al., J. Phys. C., 9 (1976), p. 579.
38. L. Ramqvist et al., J. Phys. Chem. Solids, 30 (1969), p. 1835.
39. H.J. Juretschke and R. Steinitz, J. Phys. Chem. Solids, 4 (1958), pp. 118-127.
40. R.T. Dolloff and W.S. Williams, Bull. Am. Phys. Soc. Ser. II, 4 (1959).
41. R.K. Williams, R.S. Graves, and F.J. Weaver, J. Appl. Phys., 59 (1986), pp. 1552-1556.
42. M.V. Frandsen, Ph.D. thesis, University of Illinois at Urbana-Champaign (1997).
43. M. Rahman et al., J Am. Ceram. Soc., 78 (1995), pp. 1380-1382.
44. H. Ihara, Researches of the Electrochemical Laboratory Japan), 725 (1977).
45. Y. Ishizawa and T. Tanaka, Inst. Inst. Phys. Conf. Ser. No. 75, Ch. 1 (Adam Hilger Ltd, 1986), pp. 29-43.
46. C.S. Choi et al., J. Appol. Phys., 69 (1991), pp. 7853-7861.
47. K. Bachman and W.S. Williams, J. Appl. Phys., 42 (1971), pp. 4407-4407.
48. S. Sarian, J. Appl. Phys., 39 (1968), p. 3305.
49. S. Sarian, J. Appl. Phys., 40 (1969), p. 3515.
50. J.W. Morris, Jr., C.-U. Kim, and S.H. Kang, JOM, 48 (4) (1996), pp. 43-46.
51. C. Emsberger et al., J. Vac. Sci. Technol., A4 (1986), pp. 2784-2788.
52. E.J. Cukauskas and W.L. Carter, IEEE Trans. on Magnetics 25, #2 (1989), pp. 1235-1238.
53. M. Aoyagi et al., Jpn. J. Appl. Phys., 31 (1992), pp. 1778-1783.
54. P. Mochel, C. Allison, and W. S. Williams, J. Am. Ceram. Soc., 64 (1981), pp. 185-187.