Amorphous Ta-Si-N diffusion barriers on GaAs

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 292-296

  Kuchuk, A ^a   Kaminska, E ^a   Piotrowska, A ^a   Golaszewska, K ^a   Dynowska, E ^b   Lytvyn, O S ^c   Nowicki, L ^d   Ratajczak, R ^d  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^d SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

Author keywords

Diffusion barrier; GaAs; Metallisation; Thin films

Indexed keywords

ANNEALING; COMPOSITION; CRYSTALLIZATION; DIFFUSION; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; METALLIZING; SEMICONDUCTING GALLIUM ARSENIDE; TERNARY SYSTEMS; THERMODYNAMIC STABILITY;

CRYSTALLIZATION TEMPERATURE; DIFFUSION BARRIERS;

THIN FILMS;

EID: 2942596133     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.137     Document Type: Conference Paper

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