Refractory metal boride ohmic contacts to P-Type 6H-SiC

Journal of Electronic Materials

Volumn 27, Issue 1, 1998, Pages 12-16

  Oder, T N ^a   Williams, J R ^a   Mohney, S E ^b   Crofton, J ^c  

^a AUBURN UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c MURRAY STATE UNIVERSITY   (United States)

Author keywords

CrB2; Ohmic contact; p type 6H SiC; Rutherford backscattering spectrometry; Specific contact resistance; TiB2; W2B

Indexed keywords

ANNEALING; BORIDES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; OPTOELECTRONIC DEVICES; PHYSICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SPUTTER DEPOSITION;

LINEAR TRANSMISSION LINE METHOD; SPECIFIC CONTACT RESISTANCE;

OHMIC CONTACTS;

EID: 0031700760     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0330-x     Document Type: Article

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