|
Volumn 48, Issue 1, 1999, Pages 231-234
|
Ion beam synthesis of narrow Ge nanocluster bands in thin SiO2 films
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
INTERFACES (MATERIALS);
ION BOMBARDMENT;
ION IMPLANTATION;
NANOSTRUCTURED MATERIALS;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR GROWTH;
SILICA;
SYNTHESIS (CHEMICAL);
THIN FILMS;
ION BEAM SYNTHESIS;
NANOCLUSTER BANDS;
SEMICONDUCTING FILMS;
|
EID: 0033190151
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-9317(99)00377-9 Document Type: Article |
Times cited : (26)
|
References (10)
|