Low energy N2 ion bombardment for removal of (Hf O2) x (SiON)1-x in dilute HF

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 1056-1061

  Hwang, Wan Sik ^a   Cho, Byung Jin ^a   Chan, Daniel S H ^a   Yoo, Won Jong ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRIC PROPERTIES; NITROGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SUBSTRATES;

ION ASSISTED WET REMOVAL PROCESS; PLASMA TREATMENT; SEMICONDUCTOR DEVICE FABRICATION; WET REMOVAL PROCESS;

ION BOMBARDMENT;

EID: 34547358944     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2731339     Document Type: Article

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