Dependence of electrical properties of HfSiON gate dielectrics on TaSiN metal electrode thickness

Semiconductor Science and Technology

Volumn 22, Issue 7, 2007, Pages 732-735

  Kamiyama, Satoshi ^a   Miura, Takayoshi ^a   Nara, Yasuo ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ELECTRODES; FILM THICKNESS; HAFNIUM COMPOUNDS; ULTRATHIN FILMS;

GATE STACKS; METAL ELECTRODE THICKNESS; METAL GATE TRANSISTORS; NITROGEN DIFFUSION;

GATE DIELECTRICS;

EID: 34547350067     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/7/010     Document Type: Article

References (20)

1. Stathis J H et al 1998 IEDM Tech. Dig. p 167
2. Yu B et al 2000 Symp. VLSI Tech. Dig. p 90
3. Wilk G D et al 2000 J. Appl. Phys. 87 484
4. Kirsch P D et al 2002 J. Appl. Phys. 91 4353
5. Koyama M et al 2002 IEDM Tech. Dig. p 849
6. Tsui B Y et al 2003 J. Appl. Phys. 93 10119
7. Aoyama T et al 2003 Extended abstracts of the 2003 International Workshop on Gate Insulator (IWGI) p 174
8. Sneh O et al 2002 Thin Solid Films 402 248
9. Kim H et al 2003 Appl. Phys. Lett. 82 106
10. Cho M et al 2004 Appl. Phys. Lett. 85 5953
11. He W et al 2004 Electrochem. Solid-State Lett. 7 G131
12. Rittersma Z M et al 2004 J. Electrochem. Soc. 151 C716
13. Kamiyama S et al 2005 Electrochem. Solid-State Lett. 8 G215
14. Kamiyama S et al 2005 Appl. Phys. Lett. 86 222904
15. Kamiyama S et al 2005 Electrochem. Solid-State Lett. 8 G355
16. Zhang Z B et al 2005 Symp. VLSI Tech. Dig. p 50
17. Hou Y T et al 2005 IEDM Tech. Dig. p 35
18. Kamiyama S et al 2005 J. Electrochem. Soc. 152 G750
19. Tanaka M et al 2000 J. Electrochem. Soc. 147 2284
20. Saito S et al 2002 IEEE Electron Device Lett. 23 348