Optimized reactive ion etch process for high performance SiC bipolar junction transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 961-966

  Goulakov, A B ^a   Zhao, F ^a   Perez Wurfl, I ^a   Torvik, J T ^a   Van Zeghbroeck, B ^b  

^a MICROSEMI CORPORATION   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; EPITAXIAL LAYERS; REACTIVE ION ETCHING; SHEET RESISTANCE;

CRITICAL ETCH PROCESSES; EMITTER-BASE JUNCTION; HOMOEPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 34547320258     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2436502     Document Type: Article

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