Analysis of transit times and minority carrier mobility in n-p-n 4H-SiC bipolar junction transistors

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2541-2545

  Zhao, Feng ^a   Perez, Ivan ^a   Huang, Chih Fang ^a   Torvik, John ^a   Van Zeghbroeck, Bart ^a,b  

^a MICROSEMI CORPORATION   (United States)

^b University of Colorado at Boulder   (United States)

Author keywords

4H SiC; Bipolar junction transistors (BJTs); Minority carrier mobility; Transit frequency; Transit time

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TRANSIT TIME DEVICES;

BIPOLAR JUNCTION TRANSISTORS (BJTS); MINORITY CARRIER MOBILITY; TRANSIT FREQUENCY;

BIPOLAR TRANSISTORS;

EID: 29244451429     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859669     Document Type: Article

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