Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 160-163

  Richter, Christoph ^a   Espertshuber, Klaus ^a   Wagner, Christoph ^a   Eickhoff, Martin ^a   Krötz, Gerhard ^a  

^a DAIMLER AG   (Germany)

Author keywords

Aluminium mask material; Etch rate; Selectivity; SiC

Indexed keywords

ALUMINUM; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MASKS; NITROGEN COMPOUNDS; OXYGEN; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SILICA; THERMAL EFFECTS;

NITROGEN TRIFLUORIDE;

SILICON CARBIDE;

EID: 0031118287     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01969-1     Document Type: Article

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