Effects of substrate bias and nitrogen flow ratio on the resistivity and crystal structure of reactively sputtered Zr Nx films at elevated temperature

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 651-658

  Jeng, J S ^a   Wang, S H ^b   Chen, J S ^b  

^a FAR EAST UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; POROSITY; SPUTTER DEPOSITION; VACUUM APPLICATIONS; ZIRCONIUM ALLOYS;

ANNEALING TEMPERATURE; NITROGEN FLOW RATIO; NITROGEN OUTDIFFUSION;

THIN FILMS;

EID: 34547316331     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2735966     Document Type: Article

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