Analysis of the oxidation kinetics and barrier layer properties of ZrN and Pt/Ru thin films for DRAM applications

Thin Solid Films

Volumn 280, Issue 1-2, 1996, Pages 265-270

  Al Shareef, H N ^a,b   Chen, X ^a   Lichtenwalner, D J ^a   Kingon, A I ^a  

^a North Carolina State University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Metallization; Oxidation; Reaction kinetics; Sputtering

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; METALLIZING; OXIDATION; PERMITTIVITY; PLATINUM; RANDOM ACCESS STORAGE; REACTION KINETICS; SPUTTER DEPOSITION; SURFACE ROUGHNESS; THIN FILMS; ZINC COMPOUNDS;

BARRIER LAYER PROPERTIES; DIFFUSION LIMITED OXIDATION; DYNAMIC RANDOM ACCESS MEMORY; THERMAL ACTIVATION;

METALLIC FILMS;

EID: 0030191054     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08194-1     Document Type: Article

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