Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Bhatta, R P ^a   Thoms, B D ^a   Alevli, M ^a   Woods, V ^a   Dietz, N ^a  

^a GEORGIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEXAGONAL PATTERN DEMONSTRATIONS; HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTRA; N-H TERMINATIONS; POLARITY OF INDIUM NITRIDE;

CHEMICAL VAPOR DEPOSITION; COMPOSITION; CONTAMINATION; DEUTERIUM; ELECTRON DIFFRACTION; ELECTRONS; HYDROGEN; OPTICAL RESOLVING POWER; PHONONS; SURFACE CLEANING; SURFACE STRUCTURE;

INDIUM COMPOUNDS;

EID: 33645498554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2187513     Document Type: Article

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