Properties of InN grown by high-pressure CVD

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 77-82

  Alevli, Mustafa ^a   Durkaya, Goksel ^a   Woods, Vincent ^a   Haboeck, Ute ^c   Kang, Hun ^b   Senawiratne, Jayantha ^a   Strassburg, Martin ^a,b   Ferguson, Ian T ^b   Hoffmann, Axel ^c   Dietz, Nikolaus ^a  

^a GEORGIA STATE UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; RAMAN SCATTERING; SEMICONDUCTOR GROWTH; SOLAR CELLS; SOLID STATE LASERS;

HIGH-PRESSURE CHEMICAL VAPOR DEPOSITION (HPCVD) SYSTEM; INN LAYERS; OPTICAL MONITORING; REAL-TIME OPTICAL CHARACTERIZATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33646403436     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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