Laser annealing of Al implanted silicon carbide: Structural and optical characterization

Applied Surface Science

Volumn 253, Issue 19, 2007, Pages 7912-7916

  Boutopoulos, C ^a   Terzis, P ^a,b   Zergioti, I ^a   Kontos, A G ^a   Zekentes, K ^b   Giannakopoulos, K ^c   Raptis, Y S ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

Al doped 4H SiC surface; Electronic and optoelectronic devices; Nd:YAG laser; UV laser irradiation; XeCl excimer laser

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CRYSTAL STRUCTURE; DOPING (ADDITIVES); HARMONIC GENERATION; SILICON CARBIDE;

CROSS SECTIONAL BACKSCATTERING; LASER ANNEALING; UV LASER IRRADIATION; XECL EXCIMER LASERS;

LASER PULSES;

EID: 34447326703     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.02.070     Document Type: Article

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