메뉴 건너뛰기




Volumn 86, Issue 4, 1999, Pages 2073-2077

Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0042203954     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371011     Document Type: Article
Times cited : (25)

References (22)
  • 5
    • 36049060168 scopus 로고
    • D. W. Feldman, J. H. Parker, Jr., W. J. Choyke, and L. Patrick, Phys. Rev. 173, 787 (1968); 170, 698 (1968).
    • (1968) Phys. Rev. , vol.170 , pp. 698


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.