Long-pulse duration excimer laser annealing of Al + ion implanted 4H-SiC for pn junction formation

Applied Surface Science

Volumn 208-209, Issue 1, 2003, Pages 292-297

  Dutto, C ^a,b   Fogarassy, E ^b   Mathiot, D ^b   Muller, D ^b   Kern, P ^b   Ballutaud, D ^b  

^a STMICROELECTRONICS   (France)

^b CNRS   (France)

Author keywords

Doping; Excimer laser; Pn junction diodes; Silicon carbide; Thermal simulation

Indexed keywords

ALUMINUM; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; EXCIMER LASERS; ION IMPLANTATION; LASER PULSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; LASER BEAM EFFECTS; SEMICONDUCTOR DIODES;

LASER ANNEALING;

SILICON CARBIDE; ANNEALING;

EID: 0037443171     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01357-0     Document Type: Conference Paper

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