High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 599-602

  Tsai, Chun Chien ^a   Chen, Hsu Hsin ^a   Chen, Bo Ting ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Bottom gate (BG); Excimer laser crystallization (ELC); Lateral grain growth; Self aligned (SA); Thin film transistor (TFT)

Indexed keywords

BOTTOM GATE (BG); EXCIMER LASER CRYSTALLIZATION (ELC); LATERAL GRAIN GROWTH; POLY-SILICON THIN-FILM TRANSISTORS;

CRYSTALLIZATION; EXCIMER LASERS; GATES (TRANSISTOR); GRAIN GROWTH; LASER BEAM EFFECTS; POLYSILICON; SEMICONDUCTING SILICON;

THIN FILM TRANSISTORS;

EID: 34447272255     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.899326     Document Type: Article

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