High field mobility poly-Si TFTs fabricated by advanced lateral crystal growth using double-pulsed annealing system

IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005

Volumn , Issue 2, 2005, Pages 965-968

  Sakuragi, S ^a   Kudo, T ^a   KYamazaki, ^a   Asano, I ^b  

^a SUMITOMO HEAVY INDUSTRIES LTD   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CRYSTAL GROWTH; FIELD EFFECT TRANSISTORS; POLYSILICON; PULSED LASER APPLICATIONS;

DOUBLE PULSED GREEN LASER ANNEALING; LATERAL CRYSTAL GROWTH; N CHANNELS; TEMPERATURE DEPENDENCE;

THIN FILM TRANSISTORS;

EID: 33644583216     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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