Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3872-3878

  Ishihara, Ryoichi ^a   Burtsev, Artyom ^a   Alkemade, Paul F A ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Crystatlographic orientation; Excimer laser; Large grain; Location control; Polycrystalline silicon; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRONIC DENSITY OF STATES; EXCIMER LASERS; GRAIN SIZE AND SHAPE; MULTILAYERS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICA; SUBSTRATES; TOPOLOGY;

DUAL BEAM EXCIMER LASER; ELECTRON BACK SCATTERING PATTERN; GLASS SUBSTRATE; LOCATION CONTROL; THICK OXIDE PORTION;

THIN FILM TRANSISTORS;

EID: 0034215433     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3872     Document Type: Article

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