Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidification

IEEE Electron Device Letters

Volumn 19, Issue 8, 1998, Pages 306-308

  Crowder, M A ^a   Carey, P G ^b   Smith, P M ^b   Sposili, Robert S ^a   Cho, Hans S ^a   Im, James S ^a  

^a Howard Hughes Medical Institute   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Excimer laser crystallization; Sequential lateral solidification; Super lateral growth; Thin film transistors

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; GRAIN BOUNDARIES; LOW TEMPERATURE EFFECTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SINGLE CRYSTALS; SOLIDIFICATION;

SEQUENTIAL LATERAL SOLIDIFICATION (SLS); SUPERLATERAL GROWTH;

THIN FILM TRANSISTORS;

EID: 0032137394     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.704408     Document Type: Article

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