Theoretical study of dangling-bond wires on the H-terminated Si surface

Surface Science

Volumn 532-535, Issue , 2003, Pages 556-559

  Cakmak M ^a   Srivastava, G P ^b  

^a GAZI UNIVERSITY   (Turkey)

^b UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

Density functional calculations; Hydrogen; Low index single crystal surfaces; Silicon

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; DIMERS; ELECTRONIC PROPERTIES; HYDROGEN; HYDROGENATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS; SILICON; SINGLE CRYSTALS; SURFACE STRUCTURE;

SELECTIVE DESORPTION;

NANOSTRUCTURED MATERIALS;

EID: 0038522605     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00118-3     Document Type: Conference Paper

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