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Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si.100/-2×1-Hsurface

(7) Hitosugi, Taro a Hashizume, T b Heike, S b Wada, Y b Watanabe, S a Hasegawa, T c Kitazawa, K a

a UNIVERSITY OF TOKYO (Japan)

b HITACHI LTD (Japan)

c TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; BAND GAPS; DANGLING-BOND WIRES; FERMI ENERGY; FINITE DENSITY; FIRST-PRINCIPLES; HYDROGEN ATOMS; SCANNING TUNNELLING SPECTROSCOPY; SEMICONDUCTIVE; SI SURFACES; SI-DIMER; STM/STS; THEORETICAL CALCULATIONS;

ENERGY GAP; HYDROGEN; SILICON; SPECTROSCOPY; WIND TUNNELS;

WIRE;

EID: 0342294589 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s003390051224 Document Type: Article

Times cited : (13)

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