Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Butt, N Z ^a   Chang, A M ^a,b   Raza, H ^a   Bashir, R ^a   Liu, J ^c   Kwong, D L ^c  

^a PURDUE UNIVERSITY   (United States)

^b DUKE UNIVERSITY   (United States)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-FREQUENCY NOISE STATISTICS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PROGNOSTICATOR; ULTRATHIN GATE OXIDES;

CAPACITORS; ELECTRIC CURRENTS; NATURAL FREQUENCIES; RESONANT TUNNELING;

MOS DEVICES;

EID: 33645142937     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186114     Document Type: Article

References (9)

1. G. B. Alers, K. S. Krisch, D. Monroe, B. E. Weir, and A. M. Chang, Appl. Phys. Lett. 69, 2885 (1996).
2. J. E. Sanchez, G. Bosman, and M. E. Law, IEEE Trans. Electron Devices 50, 1353 (2003).
3. J. C. Ranuarez, M. J. Deen, and C. Chih-Hung, IEEE Electron Device Lett. 26, 550 (2005).
4. C. L. F. Ma, M. J. Deen, and R. H. S. Hardy, Can. J. Phys. 70, 1005 (1992).
5. G. B. Alers, B. E. Weir, M. A. Alam, G. L. Timp, and T. Sorch, Proc. IRPS 36, 76 (1998).
6. A. Ghetti, E. Sangiorgi, T. W. Sorsch, and I. Kizilyalli, Microelectron. Eng. 48, 31 (1999).
7. J. S. Suehle, B. Zhu, Y. Chen, and J. B. Bernstein, Microelectron. Reliab. 45, 419 (2005).
8. M. A. Alam and R. K. Smith, Proc. IRPS, 406 (2003).
9. F. Monsieur, E. Vincent, D. Roy, S. Bruyere, G. Pananakakis, and G. Ghibaudo, Proc. IRPS, 45 (2002).