Influence of the mask magnification on imaging in hyper-NA lithography

Journal of the Optical Society of America A: Optics and Image Science, and Vision

Volumn 24, Issue 6, 2007, Pages 1633-1640

  Lin, Chun Hung ^a   Chen, Hsuen Li ^b   Ko, Fu Hsiang ^c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; DIFFRACTION; LIGHT POLARIZATION; OPTICAL VARIABLES MEASUREMENT; PHOTOLITHOGRAPHY; THREE DIMENSIONAL; TOPOGRAPHY; WAVELENGTH;

MASK MAGNIFICATION; OPTICAL DIFFRACTION;

IMAGING TECHNIQUES;

EID: 34447253310     PISSN: 10847529     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAA.24.001633     Document Type: Article

References (28)

1. These data are available at http://www.itrs.net/Links/2005ITRS/ Home2005.htm.
2. R. H. French, H. Sewell, M. K. Yang, S. Peng, D. McCafferty, W. Qiu, R. C. Wheland, M. F. Lemon, L. Markoya, and M. K. Crawford, "Imaging of 32-nm 1:1 lines and spaces using 193-nm immersion interference lithography with second-generation immersion fluids to achieve a numerical aperture of 1.5 and a k1 of 0.25," J. Microlithogr., Microfabr., Microsyst. 4, 031103 (2005).
3. T. M. Bloomstein, M. F. Marchant, S. Deneault, D. E. Hardy, and M. Rothschild, "22-nm immersion interference lithography," Opt. Express 14, 6434-6443 (2006).
4. J. Zhou, Y. Fan, A. Bourov, and B. W. Smith, "Inorganic immersion fluids for ultrahigh numerical aperture 193 nm lithography," Appl. Opt. 45, 3077-3082 (2006).
5. M. McCallum, G. Fuller, and S. Owa, "From hyper NA to low NA," Microelectron. Eng. 83, 667-671 (2006).
6. B. J. Lin, "The ending of optical lithography and the prospects of its successors," Microelectron. Eng. 83, 604-613 (2006).
7. T. B. Chiou, A. Chen, S. Hsu, M. Eurlings, and E. Hendrickx, "Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging," Proc. SPIE 5645, 21-31 (2005).
8. H. Nakamura, Y. Onishi, K. Sato, S. Tanaka, S. Mimotogi, K. Hashimoto, and S. Inoue, "Contact hole formation by multiple exposure technique in ultralow k1 lithography," J. Microlithogr., Microfabr., Microsyst. 4, 023005 (2005).
9. D. Flagello, B. Geh, S. Hansen, and M. Totzeck, "Polarization effects associated with hyper-numerical-aperture (> 1) lithography," J. Microlithogr., Microfabr., Microsyst. 4, 031104 (2005).
10. A. Estroff, Y. Fan, A. Bourov, and B. Smith, "Mask-induced polarization effects at high numerical aperture," J. Microlithogr., Microfabr., Microsyst. 4, 031107 (2005).
11. A. Erdmann, "Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects," Proc. SPIE 5835, 69-81 (2005).
12. M. H. Bennett, A. Grenville, S. D. Hector, S. R. Palmer, L. H. A. Leunissen, V. Philipsen, T. M. Bloomstein, D. E. Hardy, M. Rothschild, and J. N. Hilfiker, "Experimental measurements of diffraction for periodic patterns by 193 nm polarized radiation compared to rigorous EMF simulations," Proc. SPIE 5754, 599-610 (2005).
13. A. Erdmann, T. Graf, K. Bubke, I. Höllein, and S. Teuber, "Mask defect printing mechanisms for future lithography generations," Proc. SPIE 6154, 61541C (2006).
14. K. Takehisa, "Magnification factor should be 8x for the 45 nm node," Microlithogr. World 13, 10-25 (2004).
15. S. Hector, "Mask magnification considerations: 8x over 4 x? Not yet," Microlithogr. World 13, 17-26 (2004).
16. M. G. Moharam and T. K. Gaylord, "Three-dimensional vector coupled-wave analysis of planar-grating diffraction," J. Opt. Soc. Am. 73, 1105-1112 (1983).
17. L. Li, "New formulation of the Fourier modal method for crossed surface-relief gratings," J. Opt. Soc. Am. A 14, 2758-2767 (1997).
18. C. H. Lin, H. L. Chen, W. C. Chao, C. I. Hsieh, and W. H. Chang, "Optical characterization of two-dimensional photonic crystals based on spectroscopic ellipsometry with rigorous coupled-wave analysis," Microelectron. Eng. 83, 1798-1804 (2006).
19. J. W. Goodman, Introduction to Fourier Optics, 2nd ed. (McGraw-Hill, 1996), pp. 44-45.
20. A. K. Wong and A. R. Neureuther, "Rigorous three-dimensional time-domain finite-difference electromagnetic simulation for photolithographic applications," IEEE Trans. Semicond. Manuf. 8, 419-431 (1995).
21. S. Burger, R. Kohle, L. Zschiedrich, W. Gao, F. Schmidt, R. Marz, and C. Nolscher, "Benchmark of FEM, waveguide and FDTD algorithms for rigorous mask simulation," Proc. SPIE 5992, 599216 (2005).
22. J. P. Berenger, "Three-dimensional perfectly matched layer for the absorption of electromagnetic waves," J. Comput. Phys. 127, 363-379 (1996).
23. K. Umashankar and A. Taflove, "A novel method to analyze electromagnetic scattering of complex objects," IEEE Trans. Electromagn. Compat. 24, 397-405 (1982).
24. C. Zhou and L. Li, "Formulation of the Fourier modal method for symmetric crossed gratings in symmetric mountings," J. Opt. A 6, 43-50 (2004).
25. M. Mansuripur, "Distribution of light at and near the focus of high-numerical-aperture objectives," J. Opt. Soc. Am. A 3, 2086-2093 (1986).
26. D. G. Flagello, T. Milster, and A. E. Rosenbluth, "Theory of high-NA imaging in homogeneous thin films," J. Opt. Soc. Am. A 13, 53-64 (1996).
27. A. K. Wong, Resolution Enhancement Techniques in Optical Lithography (SPIE, 2001), pp. 139-151.
28. E. Hecht, Optics, 2nd ed. (Addison-Wesley, 1987), p. 279.