From hyper NA to low NA

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 667-671

  McCallum, Martin ^a   Fuller, Gene ^b   Owa, Soichi ^c  

^a Nikon Precision Europe GmbH   (United Kingdom)

^b NIKON PRECISION INC   (United States)

^c NIKON CORPORATION   (Japan)

Author keywords

193 nm Immersion; EUV; NA; Polarization

Indexed keywords

IMAGING TECHNIQUES; LIGHT INTERFERENCE; LITHOGRAPHY; POLARIZATION; ULTRAVIOLET RADIATION;

193 NM IMMERSION; EUV; ILLUMINATION WAVELENGTH; REFLECTIVE OPTICS;

NANOTECHNOLOGY;

EID: 33646046827     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.12.036     Document Type: Article

References (4)

1. Owa S., Nagasaka H., Ishii Y., Shiraishi K., and Hirukawa S. Full-field exposure tools for immersion lithography. SPIE 5754 (2005) 655-668
2. Nelson-Thomas C.M., Palmateer S.C., and Lyszczarz T.M. Metrology methods for the quantification of edge roughness. SPIE 3332 (1998) 19-29
3. T. Miyamatsu, Y. Wang, M. Shima, S. Kusumoto, T. Chiba, H. Nakagawa, K. Hieda, T. Shimokawa, Material design for immersion lithography with high-refractive index fluid, SPIE 5753 (in press).
4. International Technology Roadmap for Semiconductors, 2001 ed., Figure 34.