Imaging of 32-nm 1:1 lines and spaces using 193-nm immersion interference lithography with second-generation immersion fluids to achieve a numerical aperture of 1.5 and a k1 of 0.25

Journal of Microlithography, Microfabrication and Microsystems

Volumn 4, Issue 3, 2005, Pages

  French, Roger H ^a,c   Sewell, Harry ^b   Yang, Min K ^a,d   Peng, Sheng ^a   McCafferty, Diane ^b   Qiu, Weiming ^a   Wheland, Robert C ^a,d   Lemon, Michael F ^a   Markoya, Louis ^b   Crawford, Michael K ^a  

^a DUPONT COMPANY   (United States)

^b ASML US Inc   (United States)

^c UNIVERSITY OF PENNSYLVANIA   (United States)

^d University of Pennsylvania ^*  (United States)

Author keywords

193 nm immersion lithography; 32 nm node; 38 nm node; ArF immersion lithography; High n immersion fluids

Indexed keywords

193-NM IMMERSION LITHOGRAPHY; 32-NM NODE; 38-NM NODE; ARF IMMERSION LITHOGRAPHY; HIGH-N IMMERSION FLUIDS;

DISPERSION (WAVES); LITHOGRAPHY; OPTICAL DEVICES; OPTICAL RESOLVING POWER; REFRACTIVE INDEX; SEMICONDUCTOR DEVICES;

IMAGING TECHNIQUES;

EID: 33644780102     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.2039953     Document Type: Article

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