Order-of-magnitude calculation of material removal mechanism in chemical-mechanical polishing at molecular scale

Mocaxue Xuebao/Tribology

Volumn 27, Issue 3, 2007, Pages 259-263

  Wang, Yong Guang ^a   Zhao, Yong Wu ^a  

^a JIANGNAN UNIVERSITY   (China)

Author keywords

Calculation; Chemical mechanical polishing (CMP); Molecular scale; Transport

Indexed keywords

CALCULATIONS; LINEAR REGRESSION; OXIDE FILMS; REACTION KINETICS;

CHEMICAL KINETICS; MOLECULAR SCALE; OXIDIZER; WAFER SURFACE;

CHEMICAL MECHANICAL POLISHING;

EID: 34447115315     PISSN: 10040595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (24)

1. Zhao Y W, Liu J J. Recent progress in study on material mechanisms of silicon wafer during chemical mechanical polishing[J]. Tribology, 2004, 24(3): 283-287.
2. Xu J, Luo J B, Lu X C, et al. The development of the mechanism about the removal in the CMP[J]. Chinese Science Bulletin, 2004, 49(17): 1700-1705.
3. Guo D M, Kang R K, Su J X, et al. Future development on wafer planarization technology in ULSI fabrication[J]. Chinese Journal of Mechanical Engineering, 2003, 39(10): 100-105.
4. Lei H, Luo J B, Ma J J. Advances and problems on chemical mechanical polishing[J]. Lubrication and Sealing, 2002, (4): 73-76.
5. Runnels S R. Advances in physically based erosion simulators for CMP[J]. Journal of Electronic Materials, 1996, 25(10): 1574-1580.
6. Jeng Y R, Huang P Y. A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing[J]. Journal of Tribology, 2005, 127: 190-197.
7. Zhao Y W, Chang L, Kim S H. A mathematical model for chemical mechanical polishing based on formation and removal of weakly bonded molecular species[J]. Wear, 2003, 254: 332-33.
8. Kuide Q, Brij M, Chang-Won P. A chemical mechanical polishing model incorporating both the chemical and mechanical effects[J]. Thin Solid Films, 2004, (446): 277-286.
9. Goodarz A, Xia X. A model for mechanical wear and abrasive particle adhesion during the chemical mechanical polishing process[J]. Journal of The Electrochemical Society, 2001, 148: G99-G109.
10. Chen P H, Shih H C, huang B W, et al. Catalytic-pad chemical kinetics model of CMP[J]. Electrochemical and Solid-state Letters, 2003, 6(12): G140-G142.
11. Che W, Guo Y J, Chandra A, et al, A scratch intersection model of material removal during chemical mechanical planarization (CMP)[J]. Journal of Manufacturing Science and Engineering, 2005, (127): 545-554.
12. Hahn P O. The 300 mm wafer--a cost and technology challenge[J]. Microelectronic Engineering, 2001, 56: 3-13.
13. Bielman M, Mahajan U, Singh R K. Effect of particles size during tungsten chemical mechanical polishing[J]. Electrochemical and Solid-state Letters, 1999, 2(8): 401-403.
14. Zhao Y W, Chang L. A micro-contact and wear model for chemical-mechanical polishing of silicon wafers[J]. Wear, 2002, 252: 220-226.
15. Luo J, Dornfield D A. Material removal mechanism in chemical mechanical polishing: theory and modeling[J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(2): 112-133.
16. Wrschka P, Hernandez J, Hsu Y, et al. Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films[J]. Journal of The Electrochemical Society, 1999, 146(7): 2689-2696.
17. Nishizawa H, Tateyama Y, Saitoh T. Ellipsometry characterization of oxidized copper layers for chemical mechanical polishing process[J]. Thin Solid Films, 2004: (455-456): 491-494.
18. Handbook of chemistry and physics[M]. 68th ed., CRC Press, Boca Raton, FL, 1987.
19. Thakurta D G, Schwendeman D W, Gutmann R J, et al. Three-dimensional wafer-scale copper chemical-mechanical planarization model[J]. Thin Solid Films, 2002, 414: 8-90.
20. Subramanian R S, Zhang L, Babu S V. Transport phenomena in chemical mechanical polishing[J]. Journal of The Electrochemical Society, 1999, 146(11): 4263-4272.
21. Cook L M. Chemical processes in glass polishing[J]. Journal of Non-Crystalline Solids, 1990, 120: 152-171.
22. Song S H, Faulkner R G, Flewitt P E J, et al. Modelling of equilibrium grain boundary solute segregation under irradiation[J]. Journal of Material Science Technology, 2005, 21(2): 196-200.