Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Marchand, H ^a   Ibbetson, J P ^a   Fini, P T ^a   Wu, X H ^a   Keller, S ^a   Denbaars, S P ^a   Speck, J S ^a   Mishra, U K ^a  

^a Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS;

BUFFER LAYERS; GROWTH MASK; PENDEO-EPITAXY; THIN FILM STRUCTURES;

HETEROJUNCTIONS;

EID: 3442890993     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s109257830000288x     Document Type: Conference Paper

References (25)

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