Atomic structure observation of silicon carbide using HRTEM

Journal of Electron Microscopy

Volumn 51, Issue 5, 2002, Pages 297-302

  Takuma, Eriko ^a   Ichinose, Hideki ^a   Chen, Fu Rong ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Atomic resolution TEM; Chemical structure image; Maximum entropy method; Projected potential imaging; Silicon carbide

Indexed keywords

ARTICLE;

ATOMS; CARBON; CRYSTAL ATOMIC STRUCTURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAXIMUM ENTROPY METHODS;

ATOMIC RESOLUTION TEM; ATOMIC-RESOLUTION; CHEMICAL STRUCTURE IMAGE; HIGH RESOLUTION; HIGH VOLTAGE TRANSMISSION ELECTRON MICROSCOPY; MAXIMUM-ENTROPY METHODS; POTENTIAL IMAGING; PROJECTED POTENTIAL IMAGING; STRUCTURE ANALYSIS; STRUCTURE IMAGE;

SILICON CARBIDE;

EID: 0036416274     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/51.5.297     Document Type: Article

References (10)

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